Three-dimensional Monte Carlo Simulations of electromigration in polycrystalline thin films

被引：19

作者：

Bruschi, P ^{[1
]}

Nannini, A ^{[1
]}

Piotto, M ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettr Informat Teleco, I-56126 Pisa, Italy

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2000年 / 17卷 / 2-4期

关键词：

D O I：

10.1016/S0927-0256(00)00041-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：299 / 304

页数：6

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