Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

被引：12

作者：

Gedi, Sreedevi ^{[1
]}

Reddy, Vasudeva Reddy Minnam ^{[1
]}

Alhammadi, Salh ^{[1
]}

Moon, Doohyung ^{[1
]}

Seo, Yeongju ^{[1
]}

Kotte, Tulasi Ramakrishna Reddy ^{[2
]}

Park, Chinho ^{[1
]}

Kim, Woo Kyoung ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Chem Engn, 280 Daehak Ro, Gyongsan 38541, South Korea

[2] Sri Venkateswasra Univ, Dept Phys, Solar Energy Lab, Tirupati 517502, Andhra Pradesh, India

来源：

COATINGS | 2019年 / 9卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

tin monosulfide; tin disulfide; chemical solution process; absorber; buffer; solar cells; renewable energy; DEPOSITION; TEMPERATURE; NANOWIRES;

D O I：

10.3390/coatings9100632

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Eco-friendly tin sulfide (SnS) thin films were deposited by chemical solution process using varying concentrations of a sulfur precursor (thioacetamide, 0.50-0.75 M). Optimized thioacetamide concentrations of 0.6 and 0.7 M were obtained for the preparation of single-phase SnS and SnS2 films for photovoltaic absorbers and buffers, respectively. The as-deposited SnS and SnS2 thin films were uniform and pinhole-free without any major cracks and satisfactorily adhered to the substrate; they appeared in dark-brown and orange colors, respectively. Thin-film studies (compositional, structural, optical, and electrical) revealed that the as-prepared SnS and SnS2 films were polycrystalline in nature; exhibited orthorhombic and hexagonal crystal structures with (111) and (001) peaks as the preferred orientation; had optimal band gaps of 1.28 and 2.92 eV; and exhibited p- and n-type electrical conductivity, respectively. This study presents a step towards the growth of SnS and SnS2 binary compounds for a clean and economical power source.

引用

页数：11

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