Tunneling spectroscopy of magnetic double barrier junctions

被引：2
|
作者：
Iovan, A. [1 ]
Lam, K. [1 ]
Andersson, S. [1 ]
Cherepov, S. S. [1 ]
Haviland, D. B. [1 ]
Korenivski, V. [1 ]
机构：
[1] Royal Inst Technol, S-10691 Stockholm, Sweden
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 06期
关键词：
current rectification; diode effect; magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); tunneling spectroscopy;
D O I：
10.1109/TMAG.2007.893313
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning tunneling microscopy (STM) is used to study transport in magnetic double tunnel junctions (DTJs) formed using a fixed transparency barrier of a patterned tunnel junction (TJ), and a variable tunnel barrier between the top electrode of the patterned junction and the STM tip. A sufficiently thin top electrode has been predicted to result in a rectification of charge current through a DTJ when the two barriers have different transparency. Our measurements indeed show a high current rectification ratio for 3-nm-thick, continuous film top electrodes, which is observed for junctions with asymmetric tunnel barriers.
引用
收藏
页码：2818 / 2820
页数：3
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