Temperature analysis on electrostatics performance parameters of dual metal gate step channel TFET

In this research work, a device structure modification for a doped tunnel field-effect transistor (TFET) is proposed with gate engineering at the gate electrode to overcome the limitations of conventional TFET. Moreover, the temperature is one of the most effective parameters which affects the device performance. In this concern, a brief research of temperature impact on DC characteristics, analog/RF parameter, and linearity parameters has been performed for the proposed device at temperatures ranging from 250K to 400K with an interval of 50K. OFF-state current is more sensitive towards high temperature which results in high ambipolar behavior due to thermal leakage current which degrades switching speed. So, the impact of temperature on output current at low applied voltages is also studied using different models like BTBT, SRH, and TAT. However, ON-state current shows a negligible impact of temperature variation that makes a very prominent device for low-power high-frequency applications. This type of detailed study on all the performance parameters of the proposed device is beneficial from a design point of view.