InGaN nano-ring structures for high-efficiency light emitting diodes

被引：138
作者：
Choi, HW
Jeon, CW
Liu, C
Watson, IM
Dawson, MD
Edwards, PR
Martin, RW
Tripathy, S
Chua, SJ
机构：
[1] Univ Strathclyde, Inst Photon, Glasgow G4 ONW, Lanark, Scotland
[2] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland
[3] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 02期
关键词：
D O I：
10.1063/1.1849439
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm(-1) Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. (C) 2005 American Institute of Physics.
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页码：021101 / 1
页数：3
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