Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes

被引：3

作者：

Monti, D. ^{[1
]}

Meneghini, M. ^{[1
]}

De Santi, C. ^{[1
,2
]}

Bojarska, A. ^{[3
]}

Perlin, P. ^{[3
,4
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

[2] Univ Padua, Ctr Giorgio Levi Cases, Via Marzolo 9, I-35131 Padua, Italy

[3] Unipress, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[4] TopGaN Ltd, Sokolowska 19-37, PL-01142 Warsaw, Poland

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

关键词：

InGaN; Laser diodes; DLTS; Dislocations; Degradation; N-GAN; TRAPS;

D O I：

10.1016/j.microrel.2018.06.055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this paper is to illustrate the dependence of DLTS characteristics and degradation of InGaN-based laser diodes (LDs) on the density of dislocations. Three groups of multi-quantum well LDs with different dislocation densities were submitted to constant current stress, at room temperature: the analysis is based on combined electrical-optical measurements and Deep-Level Transient Spectroscopy (DLTS) investigation was made before and after stress. DLTS results show the presence of a hole trap in all the samples, whose intensity is related to the dislocation density. Constant current stress induces a significant decrease in the optical power (subthreshold regime), not related exclusively to the dislocation density, and the appearance of a new deep level for electrons (point defect generated after stress).

引用

页码：864 / 867

页数：4

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