Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System

被引：204

作者：

Hoel, Cathleen A. ^{[1
]}

Mason, Thomas O. ^{[2
]}

Gaillard, Jean-Francois ^{[3
]}

Poeppelmeier, Kenneth R. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

来源：

CHEMISTRY OF MATERIALS | 2010年 / 22卷 / 12期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; INDIUM-TIN OXIDE; IN-SN-O; RAY ABSORPTION-SPECTROSCOPY; COMPOUNDS INMO3(ZNO)(M) M; ZINC-OXIDE; HOMOLOGOUS COMPOUNDS; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; X-RAY;

D O I：

10.1021/cm1004592

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zinc-indium-tin oxide (ZITO) is a potential replacement for the currently used tin-doped indium oxide (ITO) as a transparent conducting oxide (TCO) for optoelectronic devices. At the present time ITO is the material of choice for the TCO layer, but the increasing cost of indium metal and the advent of new technologies will require alternative TCOs. Over the past 15 years, bulk and thin film studies have been amassed that report the electrical and optical properties of various ZITO compositions. This review will examine the reported data and demonstrate that the bulk subsolidus phase diagram can act as a guide to understanding the numerous and varied results reported for thin films.

引用

页码：3569 / 3579

页数：11

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