Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications

被引：21

作者：

Bae, Jong-Ho ^{[1
,2
,3
]}

Back, Jong-Won ^{[1
,2
]}

Kwon, Min-Woo ^{[1
,2
]}

Seo, Jae Hwa ^{[1
,2
]}

Yoo, Keon ^{[1
,2
]}

Woo, Sung Yun ^{[1
,2
]}

Park, Kyungchul ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, ISRC, Seoul 08826, South Korea

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Capacitor-less DRAM; 1T-DRAM; PDSOI; MOSFET; cryogenic memory; QUANTUM; OPERATION; QUBIT;

D O I：

10.1109/LED.2019.2933504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A partially depleted silicon-on-insulator MOSFET is analyzed over a wide temperature range from 380K to 80K to characterize memory performance at cryogenic temperatures and verify its feasibility as a cryogenic memory cell. In the Shockley-Read-Hall theory, the generation-recombination rate decreases with decreasing temperature, therefore, the retention properties of the capacitorless single transistor DRAM cell are greatly improved as temperature decreases. The static and dynamic retention times increase sharply as temperature decreases. The dynamic retention time reaches up to similar to 3.5 s at 80K, which is similar to 10(4) times larger than that at 300K. In addition, as the temperature decreases, the current sensing margin also increases more than 2.5 times at 80K (similar to 11 mu A) compared to that at 300K, due to the improved dynamic retention characteristics and the increased transconductance.

引用

页码：1614 / 1617

页数：4

共 27 条

[1] Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers [J].

Abd El Qader, Makram ;

Singh, R. K. ;

Galvin, Sarah N. ;

Yu, L. ;

Rowell, J. M. ;

Newman, N. .

APPLIED PHYSICS LETTERS, 2014, 104 (02)

[2]

Aoulaiche M., 2012, REL PHYS S IRPS APR, DOI [10.1109/IRPS.2012.6241918, DOI 10.1109/IRPS.2012.6241918]

[3] Hybrid superconducting-magnetic memory device using competing order parameters [J].

Baek, Burm ;

Rippard, William H. ;

Benz, Samuel P. ;

Russek, Stephen E. ;

Dresselhaus, Paul D. .

NATURE COMMUNICATIONS, 2014, 5

[4] Implementing a strand of a scalable fault-tolerant quantum computing fabric [J].

Chow, Jerry M. ;

Gambetta, Jay M. ;

Magesan, Easwar ;

Abraham, David W. ;

Cross, Andrew W. ;

Johnson, B. R. ;

Masluk, Nicholas A. ;

Ryan, Colm A. ;

Smolin, John A. ;

Srinivasan, Srikanth J. ;

Steffen, M. .

NATURE COMMUNICATIONS, 2014, 5

[5] A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C [J].

Collaert, N. ;

Aoulaiche, M. ;

De Wachter, B. ;

Rakowski, M. ;

Redolfi, A. ;

Brus, S. ;

De Keersgieter, A. ;

Horiguchi, N. ;

Altimime, L. ;

Jurczak, M. .

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, :161-162

[6] Demonstration of two-qubit algorithms with a superconducting quantum processor [J].

DiCarlo, L. ;

Chow, J. M. ;

Gambetta, J. M. ;

Bishop, Lev S. ;

Johnson, B. R. ;

Schuster, D. I. ;

Majer, J. ;

Blais, A. ;

Frunzio, L. ;

Girvin, S. M. ;

Schoelkopf, R. J. .

NATURE, 2009, 460 (7252) :240-244

[7] Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory [J].

Fang, Runchen ;

Chen, Wenhao ;

Gao, Ligang ;

Yu, Weijie ;

Yu, Shimeng .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (06) :567-569

[8] QUANTUM-MECHANICAL COMPUTERS [J].

FEYNMAN, RP .

FOUNDATIONS OF PHYSICS, 1986, 16 (06) :507-531

[9] 20 GHz operation of an asynchronous wave-pipelined RSFQ arithmetic-logic unit [J].

Filippov, Timur V. ;

Sahu, Anubhav ;

Kirichenko, Alex F. ;

Vernik, Igor V. ;

Dorojevets, Mikhail ;

Ayala, Christopher L. ;

Mukhanov, Oleg A. .

SUPERCONDUCTIVITY CENTENNIAL CONFERENCE 2011, 2012, 36 :59-65

[10] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

← 1 2 3 →