Shapes of InAs quantum dots on InGaAs/InP

被引：22
作者：
Hwang, H
Yoon, S
Kwon, H
Yoon, E
Kim, HS
Lee, JY
Cho, B
机构：
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[3] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[4] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[5] Univ Illinois, Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期
关键词：
D O I：
10.1063/1.1840123
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was investigated by atomic force microscopy and transmission electron microscopy. The {136}-faceted InAs dots were elongated along either [1 (3) over bar0] or [(3) over bar 10] to form parallelogram-shaped islands analogous to hut cluster formation in SiGe/Si quantum dots. Some parallelogram dots also exhibited {110} faceting, presumably on undergoing a shape transition toward dots with facets of higher symmetry. (C) 2004 American Institute of Physics.
引用
收藏
页码：6383 / 6385
页数：3
相关论文
共 25 条
[1]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[2]   Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) [J].
Brault, J ;
Gendry, M ;
Grenet, G ;
Hollinger, G ;
Olivares, J ;
Salem, B ;
Benyattou, T ;
Bremond, G .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :506-510
[3]   Shape transition in growth of strained islands [J].
Daruka, I ;
Tersoff, J ;
Barabási, AL .
PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2753-2756
[4]   SiGe coherent islanding and stress relaxation in the high mobility regime [J].
Floro, JA ;
Chason, E ;
Twesten, RD ;
Hwang, RQ ;
Freund, LB .
PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3946-3949
[5]   TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE MORPHOLOGY OF INP STRANSKI-KRASTANOW ISLANDS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
GEORGSSON, K ;
CARLSSON, N ;
SAMUELSON, L ;
SEIFERT, W ;
WALLENBERG, LR .
APPLIED PHYSICS LETTERS, 1995, 67 (20) :2981-2982
[6]   Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope [J].
Hasegawa, Y ;
Kiyama, H ;
Xue, QK ;
Sakurai, T .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2265-2267
[7]   Calculations of the electronic structure of strained InAs quantum dots in InP [J].
Holm, M ;
Pistol, ME ;
Pryor, C .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) :932-936
[8]   Self-limiting growth of strained faceted islands [J].
Jesson, DE ;
Chen, G ;
Chen, KM ;
Pennycook, SJ .
PHYSICAL REVIEW LETTERS, 1998, 80 (23) :5156-5159
[9]   Kinetically self-limiting growth of Ge islands on Si(001) [J].
Kästner, M ;
Voigtländer, B .
PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2745-2748
[10]   In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) [J].
Kobayashi, NP ;
Ramachandran, TR ;
Chen, P ;
Madhukar, A .
APPLIED PHYSICS LETTERS, 1996, 68 (23) :3299-3301
123