Gas sensing with self-assembled monolayer field-effect transistors

被引：93

作者：

Andringa, Anne-Marije ^{[1
,2
]}

Spijkman, Mark-Jan ^{[1
,2
]}

Smits, Edsger C. P. ^{[3
]}

Mathijssen, Simon G. J. ^{[2
,4
]}

van Hal, Paul A. ^{[2
]}

Setayesh, Sepas ^{[2
]}

Willard, Nico P. ^{[2
]}

Borshchev, Oleg V. ^{[5
]}

Ponomarenko, Sergei A. ^{[5
]}

Blom, Paul W. M. ^{[1
,3
]}

de Leeuw, Dago M. ^{[1
,2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Holst Ctr, NL-5656 AE Eindhoven, Netherlands

[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[5] Russian Acad Sci, Enikolopov Inst Synthet Polymer Mat, Moscow 117393, Russia

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 05期

关键词：

Gas sensor; Self-assembled monolayer field-effect transistor; Nitric oxide; Porphyrin; EXHALED NITRIC-OXIDE;

D O I：

10.1016/j.orgel.2010.02.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：895 / 898

页数：4

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