Application of Ellipsometry to Control the Plasmachemical Synthesis of Thin TiONx Layers

被引:2
作者
Dultsev, F. N. [1 ,2 ]
Kolosovsky, E. A. [1 ]
机构
[1] RAS, Inst Semicond Phys, SB, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
关键词
CHEMICAL-VAPOR-DEPOSITION; TITANIUM NITRIDE; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; FILMS; GROWTH;
D O I
10.1155/2015/709308
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Ellipsometry is often used to determine the characteristics of films. Ellipsometric studies may turn out to be ineffective because several solutions correspond to the same polarization angles. It is demonstrated that the ambiguity is not due to the physical limitations of the method but it has a purely mathematical character. So, additional information about the film is necessary to determine the absolute values of refractive index, attenuation, and thickness.
引用
收藏
页数:8
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