Local transport measurements in graphene on SiO2 using Kelvin probe force microscopy

被引：17

作者：

Willke, Philip ^{[1
]}

Moehle, Christian ^{[1
]}

Sinterhauf, Anna ^{[1
]}

Kotzott, Thomas ^{[1
]}

Yu, Hak Ki ^{[2
,3
,4
]}

Wodtke, Alec ^{[2
,3
]}

Wenderoth, Martin ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

[2] Univ Gottingen, Inst Phys Chem, D-37077 Gottingen, Germany

[3] Max Planck Inst Biophys Chem, D-37077 Gottingen, Germany

[4] Ajou Univ, Dept Mat Sci & Engn, Suwon 443749, South Korea

来源：

CARBON | 2016年 / 102卷

关键词：

GRAIN-BOUNDARIES; RESISTIVITY;

D O I：

10.1016/j.carbon.2016.02.067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By using Kelvin Probe Force Microscopy with an additional applied electric field we investigate the local voltage drop in graphene on SiO2 under ambient conditions. We are able to quantify the variation of the local sheet resistance and to resolve localized voltage drops at line defects. Our data demonstrates that the resistance of line defects has been overestimated so far. Moreover, we show that wrinkles have the largest resistance, rho(Wrinkle) < 80 Omega mu m. Temperature-dependent measurements show that the local monolayer sheet resistance reflects the macroscopic increase in resistance with temperature while the defect resistance for folded wrinkles is best described by a temperature-independent model which we attribute to interlayer tunneling. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：470 / 476

页数：7

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