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Solution volume effect on structural, optical and photovoltaic properties of nebulizer spray deposited SnS thin films
被引:20
作者:
Arulanantham, A. M. S.
[1
]
Valanarasu, S.
[1
]
Kathalingam, A.
[2
]
Jeyadheepan, K.
[3
]
机构:
[1] Arul Anandar Coll, PG & Res Dept Phys, Madurai 625514, Tamil Nadu, India
[2] Dongguk Univ Seoul, Millimeter Wave Innovat Technol Res Ctr MINT, Seoul 04620, South Korea
[3] SASTRA Univ, Sch Elect & Elect Engn, Multifunct Mat & Devices Lab, Anusandhan Kendra 2, Tirumalaisamudram 613401, Thanjavur, India
关键词:
PYROLYSIS TECHNIQUE;
GROWTH;
OPTIMIZATION;
TEMPERATURE;
FABRICATION;
PRECURSOR;
LAYERS;
D O I:
10.1007/s10854-018-9409-1
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
SnS thin films deposited using nebulizer spray pyrolysis method by changing the precursor solution volume is reported in this work. The prepared films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectrum, atomic force microscopy, EDAX, UV-Vis spectroscopy and PL spectrofluorometer analysis. Electrical studies done using Hall Effect measurement for the film is also reported. Structural and surface morphological analyses showed high crystalline single phase of SnS thin films with relatively low surface roughness. Optical studies done on the films revealed a decrease in band gap from 1.82 to 1.73 eV for the increase of solution volume from 5 to 15 ml. The CdS film prepared by this method showed a maximum of 75% transmittance and band gap of 2.51 eV. Prepared SnS thin film showed p-type conductivity with resistivity 2.01 x 10(1) a"broken vertical bar cm and carrier concentration 4.71 x 10(17)/cm(3). A FTO/n-CdS/p-SnS heterostructure was also fabricated using the grown film and studied its photoconductivity.
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页码:12899 / 12909
页数:11
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