A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOICMOS microprocessor technology

被引：42

作者：

Plouchart, JO ^{[1
]}

Kim, JH ^{[1
]}

Zamdmer, N ^{[1
]}

Lu, LH ^{[1
]}

Sherony, M ^{[1
]}

Tan, Y ^{[1
]}

Groves, RA ^{[1
]}

Trzcinski, R ^{[1
]}

Talbi, M ^{[1
]}

Ray, A ^{[1
]}

Wagner, LF ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 09期

关键词：

broadband CMOS circuit; CPW transmission line; high gain bandwidth product; SOI; traveling waveguide amplifier;

D O I：

10.1109/JSSC.2004.831612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-mum SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.

引用

页码：1455 / 1461

页数：7

共 15 条

[1] A 0.5-8.5-GHz fully differential CMOS distributed amplifier [J].

Ahn, HT ;

Allstot, DJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (08) :985-993

[2] 0.25 μm pHEMT 40Gb/s E/O modulator drivers [J].

Carroll, JM ;

Coutant, M ;

Heins, MS ;

Campbell, CF ;

Reese, E .

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, :489-492

[3] A 40 GHz VCO with 9 to 15% tuning range in 0.13μm SOICMOS [J].

Fong, N ;

Plouchart, JO ;

Zamdmer, N ;

Liu, DX ;

Wagner, L ;

Plett, C ;

Tarr, G .

2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2002, :186-189

[4] A 12dBm 320GHz GBW distributed amplifier in a 0.12μm SOICMOS [J].

Kim, J ;

Plouchart, JO ;

Zamdmer, N ;

Trzcenski, R ;

Groves, R ;

Sherony, M ;

Tan, Y ;

Talbi, M ;

Safran, J ;

Wagner, L .

2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :478-479

[5] 3-dimensional vertical parallel plate capacitors in an SOICMOS technology for integrated RF circuits [J].

Kim, J ;

Plouchart, JO ;

Zamdmer, N ;

Sherony, M ;

Lu, LH ;

Tan, Y ;

Yoon, M ;

Jenkins, KA ;

Kumar, M ;

Ray, A ;

Wagner, L .

2003 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2003, :29-32

[6]

KIM J, 2003, IEDM

[7] A 2-50 GHz InAlAs/InCaAs-InP HBT distributed amplifier [J].

Kobayashi, KW ;

Cowles, J ;

Tran, LT ;

Block, TR ;

Oki, AK ;

Streit, DC .

GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, :207-210

[8]

Masuda S, 2002, TG IEEE GAL ARS, P99, DOI 10.1109/GAAS.2002.1049038

[9] A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology [J].

Plouchart, JO ;

Kim, J ;

Zamdmer, N ;

Sherony, M ;

Tan, Y ;

Yoon, M ;

Talbi, M ;

Ray, A ;

Wagner, L .

ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, :357-360

[10] A power-efficient 33 GHz 2:1 static frequency divider in 0.12-μm SOICMOS [J].

Plouchart, JO ;

Kim, J ;

Recoules, H ;

Zamdmer, N ;

Tan, Y ;

Sherony, M ;

Ray, A ;

Wagner, L .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :329-332

← 1 2 →