Scaling beyond conventional CMOS device

被引：0

作者：

Ieong, M ^{[1
]}

Doris, B ^{[1
]}

Kedzierski, J ^{[1
]}

Ren, ZB ^{[1
]}

Rim, K ^{[1
]}

Yang, M ^{[1
]}

Shang, HL ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We will discuss ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic. We also discuss various mobility enhancement techniques including strained silicon on insulator (SGOI), strained silicon directly on insulator (SSDOI), and hybrid orientation technology (HOT).

引用

页码：31 / 34

页数：4

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