Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD

被引：5

作者：

He, Linan ^{[1
]}

Luan, Caina ^{[1
]}

Cao, Qiong ^{[1
]}

Feng, Xianjin ^{[1
]}

Zhao, Wei ^{[1
]}

Ma, Jin ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2018年 / 53卷 / 10期

基金：

中国国家自然科学基金;

关键词：

epitaxial growth; metal organic chemical vapor deposition; MgF2; rutile SnO2 film; x-ray diffraction; THIN-FILMS; SAPPHIRE; LAYER; SPECTROSCOPY; TEMPERATURE; TRANSISTOR;

D O I：

10.1002/crat.201700168

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Rutile SnO2 epitaxial films are deposited on MgF2 (001) substrates at different substrate temperatures (540-660 degrees C) by metal organic chemical vapor deposition. Structural, optical, and electrical properties of the films as well as the epitaxial mechanism are investigated in detail. The structure analyses manifest that the film deposited at 620 degrees C is rutile phase SnO2 and exhibits the best crystallinity. The epitaxial relationships are determined as SnO2 (110) parallel to MgF2 (001) with SnO2 [001] parallel to MgF2 [110] and [(1) over bar 10]. The Hall mobility, resistivity, and carrier concentration of the 620 degrees C-deposited film are 10.4 cm(2) . V-1 . s(-1), 0.75 Omega . cm, and 8.1 x 10(17) cm(-3) respectively. The average transmittance in the visible range of the SnO2 film deposited at 620 degrees C exceeds 88% and the optical band gap is about 3.93 eV.

引用

页数：5

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