InAs/GaAs quantum dot intermixing induced by proton implantation

被引：38

作者：

Ji, YL ^{[1
]}

Lu, W ^{[1
]}

Chen, GB ^{[1
]}

Chen, XS ^{[1
]}

Wang, Q ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.1530717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the intermixing effect of multilayer self-assembled InAs/GaAs quantum dots on photoluminescence (PL) spectra. Proton implantation combined with rapid thermal annealing is used to induce intermixing at the interface of InAs and GaAs. Intermixing results in a change of both the optical transition energy and the linewidth of the PL emission peaks. A blueshift up to 94.3 meV is obtained in the PL emission peaks. Our results show that proton implantation is an efficient method to tune the electronic states in self-assembled InAs/GaAs quantum dots. (C) 2003 American Institute of Physics.

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页码：1208 / 1211

页数：4

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