Resolution of calixarene resist under low energy electron irradiation

The resolution and sensitivity of calixarene resists in relation to incident electron energy were studied. While the sensitivity of the resists was varied in compliance with Bethe theory for the changes of the electron energy, resolution of the resists in terms of the minimum dot size, shows almost the same value of about 10 nm for each electron energy. A Monte Carlo simulation suggests the electron dose at the edge of the dot pattern was only one hundredth of that at the center of the electron beam. This means the major factor in limiting the resolution in calixarene resists was not the electron beam profile, but other factors such as a limit due to development processes.