The comparison of electrical characteristics of Au/n-InP/In and Au/In2S3/n-InP/In junctions at room temperature

被引：18

作者：

Cakici, T. ^{[1
]}

Saglam, M. ^{[1
]}

Guzeldir, B. ^{[1
]}

机构：

[1] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2015年 / 193卷

关键词：

Spray pyrolysis; Electrical properties; In2D3; Schottky diode; Series resistance; CURRENT-VOLTAGE CHARACTERISTICS; GAAS/IN SANDWICH STRUCTURE; SCHOTTKY-BARRIER DIODES; C-V CHARACTERISTICS; IN2S3; THIN-FILMS; SILAR METHOD; OPTICAL-PROPERTIES; SERIES RESISTANCE; INTERFACE STATES; I-V;

D O I：

10.1016/j.mseb.2014.11.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated Au/n-InP/In and Au/In2S3/n-InP/In junctions and investigated their electrical properties at room temperature. The In2S3 thin film has been directly formed on n-type InP substrate with spray pyrolysis method at 200 degrees C substrate temperature. Detailed structural and optical properties of the film have been investigated by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and absorption techniques. The band gap energy of In2S3 by using spectral data of absorption has been determined to be about 2.80 eV. The values of the ideality factor and barrier height of the Au/n-InP/In and Au/In2S3/n-InP/Injunctions have been found as n = 1.01, Phi(b) = 0.469 eV and n = 1.07, Phi(b) = 0.543 eV, respectively. Likewise, the values of barrier height and series resistance of both samples have been obtained from Norde method and they have been calculated as 0.456 eV, 59.081 Omega for Au/n-InP/In junction and 0.518 eV, 101.302 delta for Au/In2S3/n-InP/In junction, respectively. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：61 / 69

页数：9

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