Near-field microwave microscope with improved sensitivity and spatial resolution

被引:22
|
作者
Tselev, A
Anlage, SM [1 ]
Christen, HM
Moreland, RL
Talanov, VV
Schwartz, AR
机构
[1] Univ Maryland, Dept Phys, MRSEC, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA
[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[4] Neocera Inc, Beltsville, MD 20705 USA
[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 2003年 / 74卷 / 06期
关键词
D O I
10.1063/1.1571954
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The near-field scanning microwave microscope has become a popular instrument to quantitatively image high-frequency properties of metals and dielectrics on length scales far shorter than the wavelength of the radiation. We have developed several new ways to operate this microscope to dramatically improve its spatial resolution and material property sensitivity. These include a novel distance-following method that takes advantage of the stability of a synthesized microwave source to improve the signal-to-noise ratio of our earlier frequency-following imaging technique. We also discuss novel height-modulated imaging techniques, culminating in a new tapping-mode method, which makes a 14 dB improvement in sensitivity, a 17.5 dB improvement in signal-to-noise ratio, and a factor of 2.3 improvement in spatial resolution compared to distance-following imaging. (C) 2003 American Institute of Physics.
引用
收藏
页码:3167 / 3170
页数:4
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