Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles

被引：41

作者：

Sung, Jun-Ho ^{[1
]}

Yang, Jeong Su ^{[1
]}

Kim, Bo-Soon ^{[1
]}

Choi, Chul-Hyun ^{[1
]}

Lee, Min-Woo ^{[1
]}

Lee, Seung-Gol ^{[1
]}

Park, Se-Geun ^{[1
]}

Lee, El-Hang ^{[1
]}

O, Beom-Hoan ^{[1
]}

机构：

[1] Inha Univ, OPERA, Inchon 402751, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

electroluminescence; gallium compounds; III-V semiconductors; light emitting diodes; nanoparticles; semiconductor quantum wells; silver; surface plasmon resonance; wide band gap semiconductors; SURFACE-PLASMON RESONANCE; EFFICIENCY; LUMINESCENCE; EXTRACTION; PARTICLES;

D O I：

10.1063/1.3457349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhanced electroluminescence of GaN-based light-emitting diodes (LEDs) with noble metallic nanoparticles (MNPs) is demonstrated. The sample with well-designed Ag MNPs has shown the best performance enhancement of 126% in electroluminescent intensity compared with a conventional LED sample, even though the MNPs are placed at least 200 nm away from the quantum-well active layer. The MNPs provide enhanced photon scattering and coupling between localized surface plasmon resonance (LSPR) modes and photon modes internally trapped in a device. To investigate this effect, the peculiarities of the LSPR and the corresponding structural properties of the MNPs are discussed through the effective medium approach. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457349]

引用

页数：3

共 20 条

[1]

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