Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

被引：33

作者：

Liu, H. Y. ^{[1
]}

Avrutin, V. ^{[1
]}

Izyumskaya, N. ^{[1
]}

Reshchikov, M. A. ^{[2
]}

Ozgur, U. ^{[1
]}

Morkoc, H. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

II-VI semiconductors; diffraction; electrical properties; optical properties; MBE; MOLECULAR-BEAM EPITAXY;

D O I：

10.1002/pssr.200903410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate a critical effect of a metal-to-oxygen ratio on the electrical, optical, and structural properties of ZnO films heavily doped with Ga (carrier concentration in the range of 10(20)-10(21) cm(-3)) grown by plasma-assisted molecular beam epitaxy. The as-grown layers prepared under the metal-rich conditions exhibited resistivities below 3 x 10(-4) Omega cm and an optical transparency exceeding 90% in the visible spectral range as well as a large blue shift of the transmission/absorption edge attributed to the Burstein-Moss shift of the Fermi level deep into the conduction band, indicating high donor concentration. In contrast, the films grown under the oxygen-rich conditions required thermal activation and showed inferior properties. Furthermore, electrical measurements point to the nonuniform depth distribution of free carriers. An oxygen-pressure-dependent surface disordering is suggested to be responsible for the drastic effect of the metal-to-oxygen ratio on the film properties. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：70 / 72

页数：3

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