Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal

被引：15
作者：
Guo, Zhibo [1 ]
Hitchcock, Collin [1 ]
Wetzel, Christian [1 ]
Karlicek, Robert F., Jr. [1 ]
Piao, Guanxi [2 ]
Yano, Yoshiki [2 ]
Koseki, Shuuichi [2 ]
Tabuchi, Toshiya [2 ]
Matsumoto, Koh [2 ]
Bulsara, Mayank [3 ]
Chow, T. Paul [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
[2] Taiyo Nippon Sanso Corp, Tsukuba, Ibaraki 3002611, Japan
[3] MATHESON Tri Gas, 150 Allen Rd,Suite 302, Basking Ridge, NJ USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 11期
基金：
美国国家科学基金会;
关键词：
GaN; monolithic integration; LED; quasi-vertical power UMOSFET; FET; LED power ratio vs; area ratio trade-off;
D O I：
10.1109/LED.2019.2943911
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the demonstration of monolithically integrated light-emitting diode (LED) and quasi-vertical U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) in GaN. Selective epi removal (SER) approach was used on an LED-on-FET epi stack on sapphire substrates. Individual p-GaN layers were used for LED and FET in our design. LED light modulation by the supply voltage and the FET gate voltage was realized, and an integrated 350 mu m x 350 mu m LED/UMOSFET pair exhibits a light output power (LOP) of 4.9 W/cm(2) or 6.0 mW. An integrated device with a UMOSFET driving a 3-LED chain was also demonstrated. The normally-off power UMOSFET has a threshold voltage of 7 V, a breakdown voltage of 208 V, and a specific on-resistance of 23 m Omega-cm(2),in which hexagonal cells were applied to obtain identical m-plane MOS gate interfaces. The effect of FET sizing on integrated pairs was also studied, and a trade-off model of FET/LED power ratio vs. FET/LED area ratio was created, which serves as universal criterion for FET/LED integration. The tested device with the best trade-off has FET/LED area ratio of 24% and FET/LED power ratio of 56%. This work creates a new building block for future GaN light-emitting integrated circuits (LEICs).
引用
收藏
页码：1736 / 1739
页数：4
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