Diffusion of heavy ions in KTiOPO4

500 keV and 900 keV Xe+, 400 keV Er+ and 400 keV Tm+ were implanted into potassium titanyl phosphate (KTiOPO4 or KTP) at room temperature. The fluences were 1 x 10(16) ions/cm(2), 1 x 10(15) ions/cm(2) and 2 x 10(15) ions/cm(2), respectively, for Xe+, Er+ and Tm+ ions. In order to observe the effect of H ions on the Er+ diffusion in KTiOPO4, the sample implanted with 400 keV Er+ was irradiated by 50 keV H+ to a fluence of 4 x 10(16) ions/cm(2). The KTiOPO4 samples were annealed at different temperatures in ambient N-2. Rutherford backscattering of MeV He ions was used to study the diffusion behavior of Xe+, Er+ and Tm+ in KTiOPO4. The results show that: (1) for the case of 500 keV and 900 keV Xe+, the implanted ions have redistributed and some have been lost after 600 degrees C, 700 degrees C and 800 degrees C annealing; (2) for the case of 400 keV Er+ followed by 50 keV H+, implanted Er+ ions have an asymmetric distribution and a long tail extending towards the deep side after 800 degrees C annealing, most of them moved to the surface; (3) for the case of 400 Tm+, no obvious diffusion behavior was observed after 800 degrees C annealing. (C) 2000 Elsevier Science S.A. All rights reserved.