Origin and control of high-temperature ferromagnetism in semiconductors

被引:303
作者
Kuroda, Shinji
Nishizawa, Nozomi
Takita, Koki
Mitome, Masanori
Bando, Yoshio
Osuch, Krzysztof
Dietl, Tomasz
机构
[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan
[2] NIMS, Adv Mat & Nanomat Labs, Tsukuba, Ibaraki 3050044, Japan
[3] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
[4] Univ S Africa, Dept Phys, ZA-0003 Pretoria, South Africa
[5] Polish Acad Sci, Inst Phys, Lab Cryogen & Spintron Res, PL-02668 Warsaw, Poland
[6] ERATO, Semicond Spintron JST Project, PL-02668 Warsaw, Poland
[7] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
关键词
D O I
10.1038/nmat1910
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The extensive experimental and computational search for multifunctional materials has resulted in the development of semiconductor and oxide systems, such as ( Ga, Mn) N, ( Zn, Cr) Te and HfO2, which exhibit surprisingly stable ferromagnetic signatures despite having a small or nominally zero concentration of magnetic elements. Here, we show that the ferromagnetism of ( Zn, Cr) Te, and the associated magnetooptical and magnetotransport functionalities, are dominated by the formation of Cr- rich ( Zn, Cr) Te metallic nanocrystals embedded in the Cr- poor ( Zn, Cr) Te matrix. Importantly, the formation of these nanocrystals can be controlled by manipulating the charge state of the Cr ions during the epitaxy. The findings provide insight into the origin of ferromagnetism in a broad range of semiconductors and oxides, and indicate possible functionalities of these composite systems. Furthermore, they demonstrate a bottom- up method for self- organized nanostructure fabrication that is applicable to any system in which the charge state of a constituent depends on the Fermi- level position in the host semiconductor.
引用
收藏
页码:440 / 446
页数:7
相关论文
共 50 条
[1]   Absence of magnetism in hafnium oxide films [J].
Abraham, DW ;
Frank, MM ;
Guha, S .
APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3
[2]   Seeking room-temperature ferromagnetic semiconductors [J].
Ando, Koji .
SCIENCE, 2006, 312 (5782) :1883-1885
[3]   Nitrogen doping of Te-based II-VI compounds during growth by molecular beam epitaxy [J].
Baron, T ;
Saminadayar, K ;
Magnea, N .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) :1354-1370
[4]   Magnetic percolation in diluted magnetic semiconductors [J].
Bergqvist, L ;
Eriksson, O ;
Kudrnovsky, J ;
Drchal, V ;
Korzhavyi, P ;
Turek, I .
PHYSICAL REVIEW LETTERS, 2004, 93 (13) :137202-1
[5]   Clustering in a precipitate-free GeMn magnetic semiconductor [J].
Bougeard, D. ;
Ahlers, S. ;
Trampert, A. ;
Sircar, N. ;
Abstreiter, G. .
PHYSICAL REVIEW LETTERS, 2006, 97 (23)
[6]   Ferromagnetism in oxide semiconductors [J].
Chambers, S. A. ;
Droubay, T. C. ;
Wang, C. M. ;
Rosso, K. M. ;
Heald, S. M. ;
Schwartz, D. A. ;
Kittilstved, K. R. ;
Gamelin, D. R. .
MATERIALS TODAY, 2006, 9 (11) :28-35
[7]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[8]   EFFECT OF FLUCTUATIONS OF MAGNETIZATION ON THE BOUND MAGNETIC POLARON - COMPARISON WITH EXPERIMENT [J].
DIETL, T ;
SPALEK, J .
PHYSICAL REVIEW LETTERS, 1982, 48 (05) :355-358
[9]   Self-organized growth controlled by charge states of magnetic impurities [J].
Dietl, Tomasz .
NATURE MATERIALS, 2006, 5 (09) :673-673
[10]   The chromium impurity in ZnTe: Changes of the charge state detected by optical and EPR spectroscopy [J].
Dziesiaty, J ;
Peka, P ;
Lehr, MU ;
Klimakow, A ;
Muller, S ;
Schulz, HJ .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 1997, 201 :63-73