Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes

被引：5

作者：

De Santi, Carlo ^{[1
]}

Meneghini, Matteo ^{[1
]}

Buffolo, Matteo ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

关键词：

Light emitting diode; reverse-bias stress; time-dependent breakdown; OXIDE BREAKDOWN; RELIABILITY; GENERATION; JUNCTIONS; DESIGN; MODELS; NOISE; CHIP;

D O I：

10.1109/LED.2016.2543805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the first experimental demonstration of time-dependent breakdown in GaN-based light-emitting diodes (LEDs); based on a number of constant voltage stress tests, carried out below the breakdown limit of the devices, we show that: 1) when submitted to reverse-bias stress, the LEDs show a gradual increase in current, well correlated with an increase in the breakdown luminescence signal; 2) for sufficiently long stress times, the LEDs can reach a catastrophic (sudden) breakdown, which leads to the failure of the devices; 3) the breakdown process is time-dependent and the time to failure (TTF) has an exponential dependence on stress voltage; and 4) TTF is Weibull distributed. The results presented within this letter demonstrate that the GaN-based heterostructures can show a TDDB-like behavior, and can be useful for the interpretation of the degradation data of LEDs and HEMTs.

引用

页码：611 / 614

页数：4

共 32 条

[1] Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates [J].