Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

被引：0
作者：
Nakao, Ryo [1 ,2 ]
Arai, Masakazu [1 ,2 ]
Kakitsuka, Takaaki [1 ,2 ]
Matsuo, Shinji [1 ,2 ]
机构：
[1] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2018年 / E101C卷 / 07期
关键词：
heteroepitaxial growth; Ge buffet; MOVPE; Si substrate; MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; QUANTUM-DOT LASERS; HIGH-QUALITY GE; DEFECT REDUCTION; ANTIPHASE DOMAIN; SI(001); SILICON; SUPERLATTICES; ANNIHILATION;
D O I：
10.1587/transele.E101.C.537
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-mu m range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metalorganic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.
引用
收藏
页码：537 / 544
页数：8
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