Suppression of weak antilocalization in an AlxGa1-xN/GaN two-dimensional electron gas by an in-plane magnetic field

被引：8

作者：

Cabanas, S. ^{[1
]}

Schaepers, Th.

Thillosen, N.

Kaluza, N.

Guzenko, V. A.

Hardtdegen, H.

机构：

[1] Res Ctr Julich GmbH, IBN1, D-52425 Julich, Germany

[2] Res Ctr Julich GmbH, VISel, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.75.195329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the suppression of weak antilocalization in an AlxGa1-xN/GaN two-dimensional electron gas in the presence of an additional in-plane magnetic field. By comparing our experimental data to a theoretical model, we concluded that the suppression can be attributed mainly to the Zeeman effect, while the contribution due to disorder at the AlxGa1-xN/GaN heterointerface is considerably smaller. Furthermore, our results give further evidence for the value of spin-orbit scattering length determined from weak antilocalization measurements.

引用

页数：5

共 29 条

[1]

ALTSHULER BL, 1981, JETP LETT+, V33, P499

[2] g values of effective mass donors in AlxGa1-xN alloys -: art. no. 165204 [J].