X-ray topographic characterization of growth defects in sillenite type crystals

被引：0

作者：

Martinez-Lopez, J ^{[1
]}

Gonzalez-Manas, M

Rojo, JC

Capelle, B

Caballero, MA

Dieguez, E

机构：

[1] Univ Cadiz, Dpto Cristalog & Mineral, Cadiz 11510, Spain

[2] Univ Autonoma Madrid, Dept Fis Mat, Madrid 28080, Spain

[3] Univ Paris 06, Lab Mineral Cristallog, F-75252 Paris, France

来源：

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1997年 / 22卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The piezoelectric and optoelectronic bismuth germanium oxide (BGO) and bismuth silicon oxide (BSO) crystals have been characterized by synchrotron X-ray topography. These materials, currently obtained by Czochralski method, usually contain strains due to different growth defects associated with the kind of crystal-melt interface. Defects arrangement and generation are discussed in order to control or eliminate them.

引用

页码：687 / 690

页数：4

共 8 条

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