High sensitivity photochemical sensors based on amorphous silicon

被引：4

作者：

Fortunato, E ^{[1
]}

Malik, A ^{[1
]}

Seco, A ^{[1
]}

Macarico, A ^{[1
]}

Martins, R ^{[1
]}

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Mat Sci, P-2825 Monte De Caparica, Portugal

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

引用

页码：949 / 954

页数：6

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