Growth mode and kinetics of atmospheric pressure chemical vapour deposition of β-SiC on Si(100) substrate

被引:12
作者
Ferro, G [1 ]
Vincent, H [1 ]
Monteil, Y [1 ]
Chaussende, D [1 ]
Bouix, J [1 ]
机构
[1] Univ Lyon 1, Lab Multimat & Interfaces, F-69622 Villeurbanne, France
来源
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词
epitaxy; chemical vapour deposition; kinetics; silicon;
D O I
10.4028/www.scientific.net/MSF.264-268.227
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the epitaxial growth of beta-SiC on Si (100) substrates by atmospheric chemical vapour deposition with silane anti propane. A three dimensionnal growth mode has been evidenced at 1350 degrees C, resulting in the formation of a high density of dislocations near the interface. However, the crystallinity improves when the layer get thicker by the meeting of theses dislocations. The study of the growth kinetics at short and long growth time has shown that it is influenced by the thickness of the layer. We propose an explanation of this feature by taking into account the evolution of the crystallinity with the thickness.
引用
收藏
页码:227 / 230
页数:4
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