Band offsets in heterostructures by spin splittings

被引：0
作者：
Ekpunobi, AJ [1 ]
机构：
[1] Nnamdi Azikiwe Univ, Dept Phys & Ind Phys, Awka, Anambra State, Nigeria
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 04期
关键词：
D O I：
10.1016/j.sse.2004.10.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The conduction band offset differences near the Gamma point of the lowest Gamma(1)-like conduction band of GaAs/AlAs heterostructures due to spin splittings were obtained for different k values in both <110> and <100> directions. The conduction band offset differences vanish along the <100> directions and follow a cubic dependence for small wave vectors along <110> directions. The valence band offset calculated in the sp(3)s* configuration using the recently reformulated tight binding method is 0.46 eV in good agreement with experiments. (C) 2004 Elsevier Ltd. All rights reserved.
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收藏
页码：667 / 669
页数：3
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