Noise characteristics with CMOS sensor array scaling

被引:5
作者
Accarino, Claudio [1 ]
Annese, Valerio F. [1 ]
Cheah, Boon Chong [1 ]
Al-Rawhani, Mohammed A. [1 ]
Shah, Yash D. [1 ]
Beeley, James [1 ]
Giagkoulovitis, Christos [1 ]
Mitra, Srinjoy [2 ]
Cumming, David R. S. [1 ]
机构
[1] Univ Glasgow, Dept Elect & Elect Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Edinburgh, Sch Engn, Edinburgh EH9 3FF, Midlothian, Scotland
基金
英国工程与自然科学研究理事会;
关键词
Semiconductor device noise; Noise measurement; CMOS; Ion-sensitive field effective transistor (ISFET); Photodiode; Single Photon Avalanche Diode (SPAD);
D O I
10.1016/j.measurement.2019.107325
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An important consideration when scaling semiconductor sensor devices is the effect it may have on noise performance. Overall signal to noise ratio can be improved both by increasing sensor size, or alternatively by averaging the signal from two or more smaller sensors. In the design of sensor systems it is not immediately clear which is the best strategy to pursue. In this paper, we present a detailed theoretical and experimental study based on three different sensor arrays that show that an array of small independent sensors is always less noisy than a large sensor of the same size. (C) 2019 The Authors. Published by Elsevier Ltd.
引用
收藏
页数:4
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