Silicene and germanene: Silicon and germanium in the "flatland"

被引:73
作者
Dimoulas, Athanasios [1 ]
机构
[1] NCSR Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece
基金
欧洲研究理事会;
关键词
2D materials; Silicene; Germanene; 2D hexagonal MN; Valence band structure; Hybrid surface band; ELECTRONIC-PROPERTIES; SI;
D O I
10.1016/j.mee.2014.08.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atomically thin two dimensional (2D) materials offer ultimate thickness scaling of nanoelectronic devices which could substantially improve the electrostatic control and enable a number of low power versatile applications. Silicene and germanene, the silicon and germanium equivalents of graphene have attracted an immense interest. The progress in the growth and physical characterization of these materials will be reviewed. Emphasis will be given on the most stable phases of silicene focusing on the electronic band-structure attempting to answer the question about the existence of Dirac Fermions. The stability and the challenges for field effect device processing are discussed and the new trends towards multilayer silicene and growth on non-metallic/insulating substrates are reviewed. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:68 / 78
页数:11
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