High Performance Quantum Well Micro-Hall Device for Current Sensing in Inverters

被引：0

作者：

White, Thomas ^{[1
]}

Kunets, Vasyl P. ^{[1
]}

Hirono, Yusuke ^{[1
]}

Ware, Morgan E. ^{[1
]}

Mantooth, H. Alan ^{[2
]}

Salamo, Gregory J. ^{[1
]}

机构：

[1] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

[2] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

来源：

2013 4TH IEEE INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG) | 2013年

基金：

美国国家科学基金会;

关键词：

Magnetic sensor; absolute sensitivity; low-frequency noise; detection limit; high temperature performance; MODULATION-DOPED HETEROSTRUCTURES; VELOCITY-FIELD CHARACTERISTICS; ELECTRON VELOCITY; MOBILITY; NOISE; GAAS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An InGaAs quantum well remotely-doped heterostructure grown by MBE was fabricated as a micro-Hall device and applied as a remote current sensor. Detailed studies of device sensitivities, signal linearity, and noise were performed over broad temperature and frequency ranges. Good performance was demonstrated up to 500 K with magnetic sensitivities as high as 1400 V/A/T at 80 K and 1000 V/A/T at 390 K. Detection limits at 100 kHz of 3 nT and 50 nT were measured for 80 K and 390 K, respectively. These studies suggest the need to develop magnetometers based on wide-band gap semiconductors for temperatures above 500 K.

引用

页数：6

共 13 条

[1]

DYAKONOVA NV, 1993, AIP CONF PROC, P593, DOI 10.1063/1.44616

[2] FIELD-DEPENDENT TRANSPORT OF ELECTRONS IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION SYSTEMS [J].

INOUE, K ;

SAKAKI, H ;

YOSHINO, J .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :614-616

[3] High Temperature Hall sensors using AlGaN/GaN HEMT Structures [J].

Koide, S. ;

Takahashi, H. ;

Abderrahmane, A. ;

Shibasaki, I. ;

Sandhu, A. .

ASIA-PACIFIC INTERDISCIPLINARY RESEARCH CONFERENCE 2011 (AP-IRC 2011), 2012, 352

[4] Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy [J].

Kunets, Vas. P. ;

Morgan, T. Al. ;

Mazur, Yu. I. ;

Dorogan, V. G. ;

Lytvyn, P. M. ;

Ware, M. E. ;

Guzun, D. ;

Shultz, J. L. ;

Salamo, G. J. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)

[5] Generation-recombination noise in pseudomorphic modulation-doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs micro-Hall devices [J].

Kunets, VP ;

Pomraenke, R ;

Dobbert, J ;

Kissel, H ;

Müller, U ;

Kostial, H ;

Wiebicke, E ;

Tarasov, GG ;

Mazur, YI ;

Masselink, WT .

IEEE SENSORS JOURNAL, 2005, 5 (05) :883-888

[6] NOISE SPECTROSCOPY OF LOCAL-LEVELS IN SEMICONDUCTORS [J].

LEVINSHTEIN, ME ;

RUMYANTSEV, SL .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (06) :1183-1189

[7] High temperature Hall effect sensors based on AlGaN/GaN heterojunctions [J].

Lu, H ;

Sandvik, P ;

Vertiatchikh, A ;

Tucker, J ;

Elasser, A .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)

[8]

Lukyanchikova N.B., 1996, Noise Research in Semiconductor Physics

[9] VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN DOPED GAAS [J].

MASSELINK, WT ;

KUECH, TF .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (05) :579-584

[10] ELECTRON VELOCITY AND NEGATIVE DIFFERENTIAL MOBILITY IN ALGAAS/GAAS MODULATION-DOPED HETEROSTRUCTURES [J].

MASSELINK, WT ;

BRASLAU, N ;

WANG, WI ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1533-1535

← 1 2 →