Breakdown measurements of ultra-thin SiO2 at low voltage

被引：42

作者：

Stathis, JH ^{[1
]}

Vayshenker, A ^{[1
]}

Varekamp, PR ^{[1
]}

Wu, EY ^{[1
]}

Montrose, C ^{[1
]}

McKenna, J ^{[1
]}

DiMaria, DJ ^{[1
]}

Han, LK ^{[1
]}

Cartier, E ^{[1
]}

Wachnik, RA ^{[1
]}

Linder, BP ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852783

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

MOSFETs with oxide thickness from t(ox)=1.4 to 2.2nm have been stressed for times exceeding one year, at voltages in the range V-g=1.9-4V. The data are compared with previous model calculations. The voltage acceleration of the charge-to-breakdown (Q(BD)) is explained in terms of a weak yet statistically significant voltage dependence of the critical defect density at breakdown (N-BD), and a stronger than expected voltage dependence of the defect generation probability (P-g) for the thinnest oxides studied.

引用

页码：94 / 95

页数：2

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