Melting points of Bi12GeO20 and Bi4Ge3O12

被引：0
作者：
Kaplun, AB [1 ]
Meshalkin, AB [1 ]
机构：
[1] Russian Acad Sci, Inst Thermal Phys, Novosibirsk 630090, Russia
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 05期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two quasi-isothermal procedures are proposed for precision measurements of the melting points of congruently melting compounds. The melting points of Bi4Ge3O12 and Bi12GeO20, determined by these procedures and vibrational phase analysis, are 1061 +/- 2 and 932 +/- 2 degrees C, respectively.
引用
收藏
页码：484 / 486
页数：3
相关论文
共 50 条
[21]   SOUND ATTENUATION IN BI12GEO20 AND BI12SIO20 [J].
OLIVER, DW ;
YOUNG, JD .
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1971, SU18 (01) :50-&
[22]   ANOMALOUS ULTRASONIC ATTENUATION IN BI12GEO20, BI12SIO20, AND BI12(GE0.5SI0.5)O20 [J].
REHWALD, W .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3017-3021
[23]   BI12GEO20 PHOTOELECTRICAL MEMORY [J].
BRAUN, CM ;
FUJISHIMA, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :507-509
[24]   MICROHARDNESS OF BI12SIO20, BI12TIO20, AND BI12GEO20 MONOCRYSTALS [J].
PAMUKCHIEVA, VD ;
TRIFONOVA, EP ;
HITOVA, L ;
HADJIISKI, A .
CRYSTAL RESEARCH AND TECHNOLOGY, 1993, 28 (01) :119-123
[25]   PREPARATION AND PHYSICOCHEMICAL PROPERTIES OF COMPOUNDS BI12GEO20 AND BI4(GEO4)3 [J].
KUZMINOV, YS ;
LIFSHITS, MG ;
SALNIKOV, VD .
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 14 (02) :297-&
[26]   Growth and characterization of Bi12SiO20 and Bi12GeO20 crystals [J].
Kumaragurubaran, S ;
Babu, SM ;
Subramanian, C ;
Ramasamy, P .
INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2000, 7 (5-6) :331-335
[27]   Effect of Doping on the Structure of Bi4Ge3O12 [J].
Titorenkova, Rositsa ;
Nikolova, Rositsa ;
Mihailova, Boriana .
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2009, 65 :S217-S217
[28]   ABSORPTION CENTERS OF BI12GEO20 AND BI12SIO20 CRYSTALS [J].
OBERSCHMID, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (01) :263-270
[29]   MULTIPHONON ABSORPTION IN BI4GE3O12 CRYSTALS [J].
KHOMICH, AV ;
KARGIN, VF ;
PEROV, PI ;
SKORIKOV, VM .
INORGANIC MATERIALS, 1986, 22 (05) :768-770
[30]   Photoluminescence of Bi4Ge3O12 single crystals [J].
Gusev, V.A. ;
Petrov, S.A. .
Optoelectronics, instrumentation, and data processing, 1988, (05) :15-18
12345