Effect of hydrogen remote plasma annealing on the characteristics of copper film

被引：16

作者：

Choi, KK

Yun, JH

Rhee, SW ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Dept Chem Engn, Div Elect & Comp Engn,LAMP, Pohang 790784, South Korea

[2] Hynix Semicond Inc, Syst IC R&D Ctr, Team LP2, Hungduk Gu, Chonju 361725, South Korea

来源：

THIN SOLID FILMS | 2003年 / 429卷 / 1-2期

关键词：

Cu reflow; hydrogen remote plasma annealing;

D O I：

10.1016/S0040-6090(03)00042-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of hydrogen remote plasma annealing on the characteristics of copper film such as resistivity, chemical composition and morphology was investigated. The hydrogen remote plasma enhanced the reflow of Cu and the preferential growth of Cu (111). With the increase of H-2 gas flow rate ratio {[H-2]/([H-2] + [N-2])}, plasma treatment time, and RF power, the resistivity of Cu film decreased due to the removal of impurity inside the film. The surface roughness decreased due to the smoothing of the surface, as the annealing time was increased up to 5 min but above that, the surface roughness increased because of agglomeration. The profile of Cu film in the trench opening became more conformal due to the enhanced reflow. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：255 / 260

页数：6

共 14 条

[1]

BEYER GP, 2000, MATER RES SOC S P, P612

[2] Experimental and analytical study of seed layer resistance for copper damascene electroplating [J].