Few-electron quantum dot circuit with integrated charge read out

被引:380
作者
Elzerman, JM
Hanson, R
Greidanus, JS
van Beveren, LHW
De Franceschi, S
Vandersypen, LMK
Tarucha, S
Kouwenhoven, LP
机构
[1] Delft Univ Technol, Dept NanoSci, NL-2600 GA Delft, Netherlands
[2] Delft Univ Technol, ERATO, Mesoscop Correlat Project, NL-2600 GA Delft, Netherlands
[3] NTT Corp, Basic Res Labs, Kanagawa 2430129, Japan
[4] Univ Tokyo, ERATO, Mesoscop Correlat Project, Bunkyo Ku, Tokyo 1130033, Japan
来源
PHYSICAL REVIEW B | 2003年 / 67卷 / 16期
关键词
D O I
10.1103/PhysRevB.67.161308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero, while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.
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页数:4
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