Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

被引：22

作者：

Camarda, M. ^{[1
]}

La Magna, A. ^{[1
]}

Severino, A. ^{[1
]}

La Via, F. ^{[1
]}

机构：

[1] CNR, IMM, I-95121 Catania, Italy

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

Step controlled epitaxy; Step bunching; Surface morphologies; CHEMICAL-VAPOR-DEPOSITION; DEFECT FORMATION;

D O I：

10.1016/j.tsf.2009.10.078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the < 11-20 > direction suffer "intrinsically" the step bunching phenomena (i.e. it is present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the < 10-10 > direction do not. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S159 / S161

页数：3

共 10 条

[1] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].