Electrical characterization of Pb centers in (100)Si-SiO2 structures:: The influence of surface potential on passivation during post metallization anneal

被引：75

作者：

Ragnarsson, LÅ

Lundgren, P

机构：

[1] Chalmers, Microelect Ctr, SE-41296 Gothenburg, Sweden

[2] Chalmers, Dept Microelect, Solid State Elect Lab, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 02期

关键词：

D O I：

10.1063/1.373759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage measurements were made on Cr-gated metal-oxide-silicon structures with ultrathin (similar to 30 Angstrom) thermal oxides. Using an empirical model, activation energies for the passivation of the P-b center were determined and found to be dependent on the charge state of the defect. Depassivation was found to occur at positive gate biases. (C) 2000 American Institute of Physics. [S0021-8979(00)06810-9].

引用

页码：938 / 942

页数：5

共 20 条

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