The effect of induced strains on photoluminescence properties of ZnO nanostructures grown by thermal evaporation method

被引：3

作者：

Arjmand, Yaser ^{[1
]}

Eshghi, Hosein ^{[1
]}

机构：

[1] Shahrood Univ Technol, Dept Phys, Shahrood, Iran

来源：

MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 07期

关键词：

Semiconductors; ZnO nanostructures; thermal evaporation; luminescence spectra; strains; OPTICAL-PROPERTIES; THIN-FILMS; SILICON SUBSTRATE; NETWORKS; NANORODS;

D O I：

10.1142/S0217984916500810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, ZnO nanostructures have been synthesized by thermal evaporation process using metallic zinc powder in the presence of oxygen on p-Si (100) at different distances from the boat. The structural and optical characterizations have been carried out. The morphological study shows various shape nanostructures. XR1) data indicate that all samples have a polycrystalline wurtzite hexagonal structure in such a way that the closer sample has a preferred orientation along (101) while the ones farther are grown along (002) direction. From the structural and optical data analysis, we found that the induced strains are the main parameter controlling the UV/green peaks ratios in the PI, spectra of the studied samples.

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页数：6

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