A WR4 Amplifier Module Chain With an 87 K Noise Temperature at 228 GHz

被引：11

作者：

Varonen, Mikko ^{[1
]}

Samoska, Lorene ^{[1
]}

Fung, Andy ^{[1
]}

Padmanabhan, Sharmila ^{[1
]}

Kangaslahti, Pekka ^{[1
]}

Lai, Richard ^{[2
]}

Sarkozy, Stephen ^{[2
]}

Soria, Mary ^{[1
]}

Owen, Heather ^{[1
]}

Reck, Theodore ^{[1
]}

Chattopadhyay, Goutam ^{[1
]}

Larkoski, Patricia V. ^{[3
]}

Gaier, Todd ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 01期

基金：

芬兰科学院; 美国国家航空航天局;

关键词：

Cryogenic; InP HEMT; low-noise amplifiers (LNAs); MMIC;

D O I：

10.1109/LMWC.2014.2369963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter we report an ultra-low-noise amplifier module chain in the WR4 frequency range. The amplifier chips were fabricated in a 35 nm InP HEMT technology and packaged in waveguide housings utilizing quartz E-plane waveguide probes. When cryogenically cooled to 22 K and measured through a mylar vacuum window, the amplifier module chain achieves a receiver noise temperature of 87 K at 228 GHz and less than a 100 K noise temperature from 217 to 236 GHz. The LNA modules have 21-31 dB gain and the power dissipation is 12.4-15.8 mW. To the best of authors' knowledge, these are the lowest LNA noise temperatures at these frequencies reported to date.

引用

页码：58 / 60

页数：3

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