Layer-by-layer growth of GaN induced by silicon

被引：37
作者：
Munkholm, A
Thompson, C
Murty, MVR
Eastman, JA
Auciello, O
Stephenson, GB
Fini, P
DenBaars, SP
Speck, JS
机构：
[1] Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA
[2] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA
[3] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期
关键词：
D O I：
10.1063/1.1309023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present in situ x-ray scattering studies of surface morphology evolution during metal-organic chemical vapor deposition of GaN. Dosing the GaN(0001) surface with Si is shown to change the growth mode from step-flow to layer-by-layer over a wide temperature range. Annealing of highly doped layers causes Si to segregate to the surface, which also induces layer-by-layer growth. (C) 2000 American Institute of Physics. [S0003-6951(00)02637-1].
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页码：1626 / 1628
页数：3
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