Prediction of Abnormal Etching Profile in High-Aspect-Ratio Via/Hole Etching Using On-Wafer Monitoring System

被引：5

作者：

Ohtake, Hiroto ^{[1
]}

Fukuda, Seiichi ^{[1
]}

Jinnai, Butsurin ^{[1
]}

Tatsumi, Tomohiko ^{[2
]}

Samukawa, Seiji ^{[1
]}

机构：

[1] Tohoku Univ, Inst Fluid Sci, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Oki Semicond Miyagi Co Ltd, Ohira, Miyagi 9813693, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

ELECTRICAL-CONDUCTIVITY; SIO2; EVOLUTION; CHARGE; POLYMER; MODEL;

D O I：

10.1143/JJAP.49.04DB14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the prediction of abnormal etching profiles, an ion trajectory prediction system has recently been developed. In this system, sheath modeling was combined with the on-wafer monitoring technique for accurate prediction. This system revealed that sidewall conductivity strongly affects the charge accumulation and ion trajectory in high-aspect-ratio holes. It was also found that the accumulated charge in adjacent holes is one of the reasons for the generation of twisting profiles according to analysis using the system. We presume that the prediction system is an effective tool for developing nanoscale fabrication. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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