Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

被引：215

作者：

Kegel, I ^{[1
]}

Metzger, TH

Lorke, A

Peisl, J

Stangl, J

Bauer, G

García, JM

Petroff, PM

机构：

[1] Univ Munich, CeNS, Sekt Phys, D-80359 Munich, Germany

[2] Johannes Kepler Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.85.1694

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.

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页码：1694 / 1697

页数：4

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