A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology

被引：0

作者：

Pace, Lorenzo ^{[1
]}

Ciccognani, Walter ^{[1
]}

Colangeli, Sergio ^{[1
]}

Longhi, Patrick Ettore ^{[1
]}

Limiti, Ernesto ^{[1
]}

Leblanc, Remy ^{[2
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, Rome, Italy

[2] OMMIC SAS, 2 Rue Moulin, F-94453 Limeil Brevannes, France

来源：

2019 15TH CONFERENCE ON PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) | 2019年

基金：

欧盟地平线“2020”;

关键词：

Low-Noise Amplifier (LNA); Gallium Nitride (GaN); GaN-on-Si; high linearity; HEMT; Ka-band; PERFORMANCE; HEMTS; POWER;

D O I：

10.1109/prime.2019.8787800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully deterministic approach based on constant mismatch circles has been used for the preliminary synthesis of matching networks. The designed four-stages LNA presents a 33 dB gain, Input/Output matching better than 21 dB and a Noise Figure of no more than 2.3 dB in the whole operating band, showing the suitability of the chosen technology to low-noise, high gain and linearity applications.

引用

页码：161 / 164

页数：4

共 19 条

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