The benefits and current progress of SiC SGTOs for pulsed power applications

被引：22

作者：

Ogunniyi, Aderinto ^{[1
]}

O'Brien, Heather ^{[1
]}

Lelis, Aivars ^{[1
]}

Scozzie, Charles ^{[1
]}

Shaheen, William ^{[2
]}

Agarwal, Anant ^{[3
]}

Zhang, Jon ^{[3
]}

Callanan, Robert ^{[3
]}

Temple, Victor ^{[4
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

[2] Berkeley Res Associates Inc, Beltsville, MD 20705 USA

[3] Cree Inc, Durham, NC 27703 USA

[4] Silicon Power Corp, Clifton Pk, NY 12065 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 10期

关键词：

SiC GTOs; Pulsed power; Carrier lifetime; Basal plane dislocation; Micropipe;

D O I：

10.1016/j.sse.2010.05.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon Carbide (SiC) is an extremely attractive material for semiconductor power devices because of its electrical and physical characteristics. This paper describes the benefits of utilizing SiC Super Gate Turn-Off thyristors (SGTO) in pulsed power applications, reviews the current progress and development of SIC GTOs, and presents the static and pulsed characteristics of large area GTOs with high blocking capabilities. The wide pulsed evaluation of the 0.5 cm(2) SiC SGTOs has been demonstrated and reported by the Army Research Laboratory (ARL). This paper presents the wide pulsed capabilities of the 1 cm(2) SiC SGTOs. The 1 cm(2) SiC SGTO devices handled up to twice the peak current of the 0.5 cm(2) SiC SGTOs at a 1 ms pulse width. The wide pulsed evaluation of these devices was demonstrated at ARL. ARL evaluated the static and pulsed characteristics of six of these devices. The devices had a forward blocking voltage rating of 9 kV and a trigger requirement of a negative pulse of 1 A to the gate for a millisecond pulse width. These devices were pulsed as high as 3.5 kA at 1 ms, equating to an action rate of 6 x 10(3) A(2) s and a current density of 4.8 kA/cm(2), based on the device active area. The narrow pulsed evaluation of this device has been demonstrated by Cree Inc. A peak current of 12.8 kA with a pulse width of 17 mu s (corresponding to 12.8 kA/cm(2) based on the chip size) was conducted with this device. Published by Elsevier Ltd.

引用

页码：1232 / 1237

页数：6

共 8 条

[1]

Agarwal A., 2009, P 17 IEEE PPC WASH D

[2] 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) [J].

Agarwal, AK ;

Casady, JB ;

Rowland, LB ;

Seshadri, S ;

Siergiej, RR ;

Valek, WF ;

Brandt, CD .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) :518-520

[3]

Baliga BJ, 2005, SILICON RF POWER MOSFETS, P1, DOI 10.1142/9789812569325

[4]

*CREE INC, 2009, SIC PHYS EL PROP

[5]

OBRIEN H, 2009, P 17 IEEE PPC WASH D

[6]

OGUNNIYI A, 2009, P 17 IEEE PPC WASH D, P17

[7] Reliability and performance limitations in SiC power devices [J].

Singh, R .

MICROELECTRONICS RELIABILITY, 2006, 46 (5-6) :713-730

[8] 4H-SiC BJTs with current gain of 110 [J].

Zhang, Qingchun ;

Agarwal, Anant ;

Burka, Al ;

Geil, Bruce ;

Scozzie, Charles .

SOLID-STATE ELECTRONICS, 2008, 52 (07) :1008-1010

← 1 →