Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

被引：68

作者：

Hur, Jae ^{[1
]}

Lee, Byung-Hyun ^{[1
]}

Kang, Min-Ho ^{[2
]}

Ahn, Dae-Chul ^{[1
]}

Bang, Tewook ^{[1
]}

Jeon, Seung-Bae ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

[2] Natl Nanofab Ctr, Dept Nanoproc, Daejeon 34141, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

关键词：

Band-to-band tunneling (BTBT); gate-all-around (GAA); gate-induced drain leakage (GIDL); inversion-mode (IM) FET; junctionless-mode (JM) FET; short-channel effect (SCE); vertically stacked nanowire (VS-NW); TRANSISTORS; FINFET;

D O I：

10.1109/LED.2016.2540645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive analysis of the gate-induced drain leakage (GIDL) current of vertically stacked nanowire (VS-NW) FETs was carried out. In particular, two different operational modes of the VS-NW, an inversion mode (IM) and a junctionless mode (JM), were compared. The GIDL current of the JM-FET was considerably smaller than that of the IM-FET, and the reason for the difference was consequently determined by numerical simulations. It was found that the source of the difference between the IM-FET and JM-FET was the difference in source/drain (S/D) doping concentration, where the depletion width becomes the tunneling width, considering a long extension length at the S/D regions. The experimental results showed that the GIDL current of the NW FET was significantly controlled by longitudinal band-to-band tunneling (BTBT), rather than the transverse BTBT, as had been reported in the previous literature.

引用

页码：541 / 544

页数：4

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