Electrical properties of 1.55 μm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime

被引：8
作者：
Mangeney, J
Joulaud, L
Decobert, J
Lourtioz, JM
Perrossier, JL
Cabaret, S
Crozat, P
机构：
[1] Univ Paris 11, Inst Electron Fondamentale, CNRS, UMR 8622, Orsay, France
[2] Alcatel, Marcoussis, France
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 08期
关键词：
Carrier mobility - Hall effect - Ion bombardment - Photoconducting devices - Semiconducting indium gallium arsenide;
D O I：
10.1049/el:20030441
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm(2)/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.
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收藏
页码：681 / 682
页数：2
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